A COMPARATIVE-STUDY OF GA(CH3)3 AND GA(C2H5)3 IN THE MOMBE OF GAAS

被引:166
作者
PUTZ, N
HEINECKE, H
HEYEN, M
BALK, P
WEYERS, M
LUTH, H
机构
[1] RHEIN WESTFAL TH AACHEN,BEREICH SONDERFORSCH 202,D-5100 AACHEN,FED REP GER
[2] RHEIN WESTFAL TH AACHEN,INST PHYS 2,D-5100 AACHEN,FED REP GER
关键词
D O I
10.1016/0022-0248(86)90118-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:292 / 300
页数:9
相关论文
共 18 条
[11]   PROPERTIES OF EPITAXIAL GAAS LAYERS FROM A TRIETHYL GALLIUM AND ARSINE SYSTEM [J].
SEKI, Y ;
TANNO, K ;
IIDA, K ;
ICHIKI, E .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) :1108-1112
[12]   CHEMICAL BEAM EPITAXY OF INP AND GAAS [J].
TSANG, WT .
APPLIED PHYSICS LETTERS, 1984, 45 (11) :1234-1236
[13]  
TUCK DG, 1982, COMPREHENSIVE ORGANO, P684
[14]   DOPANT INCORPORATION DURING LP-VPE OF GAAS [J].
VEUHOFF, E ;
SAUERBREY, A ;
PUTZ, N ;
HEYEN, M ;
BALK, P .
JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :101-110
[15]   SULFUR INCORPORATION IN VPE GAAS [J].
VEUHOFF, E ;
MAIER, M ;
BACHEM, KH ;
BALK, P .
JOURNAL OF CRYSTAL GROWTH, 1981, 53 (03) :598-604
[16]   BEHAVIOR OF SELENIUM IN GALLIUM ARSENIDE [J].
VIELAND, LJ ;
KUDMAN, I .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (03) :437-&
[17]  
WILEY JD, 1975, SEMICONDUCT SEMIMET, V10, P154
[18]   MASS-SPECTROMETRIC STUDY OF GA(CH3)3 AND GA(C2H5)3 DECOMPOSITION REACTION IN H-2 AND N-2 [J].
YOSHIDA, M ;
WATANABE, H ;
UESUGI, F .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) :677-679