SULFUR INCORPORATION IN VPE GAAS

被引：25

作者：

VEUHOFF, E

MAIER, M

BACHEM, KH

BALK, P

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 53卷 / 03期

关键词：

D O I：

10.1016/0022-0248(81)90145-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：598 / 604

页数：7

共 22 条

[1]

BRUCH H, 1978, REV PHYS APPL, V13, P783, DOI 10.1051/rphysap:019780013012078300

[2] PHOTOMETRIC DETERMINATION OF SULFIDE AND REDUCIBLE SULFUR IN ALKALIES [J].

BUDD, MS ;

BEWICK, HA .

ANALYTICAL CHEMISTRY, 1952, 24 (10) :1536-1540

[3] INFLUENCE OF SURFACE BAND BENDING ON INCORPORATION OF IMPURITIES IN SEMICONDUCTORS - TE IN GAAS [J].

CASEY, HC ;

PANISH, MB ;

WOLFSTIRN, KB .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (03) :571-+

[4] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J].

DILORENZO, JV ;

MOORE, GE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1823-+

[5] DOPING BEHAVIOR OF SULFUR DURING GROWTH OF GAAS FROM VAPOR-PHASE [J].

HEYEN, M ;

BRUCH, H ;

BACHEM, KH ;

BALK, P .

JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) :127-131

[6] DIFFERENCE BETWEEN (001) FACET AND VICINAL PLANES IN VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS [J].

HOLLAN, L ;

SCHILLER, C .

JOURNAL OF CRYSTAL GROWTH, 1974, 22 (03) :175-180

[7]

HURLE DT, 1978, J PHYS CHEM SOLIDS, V40, P627

[8] ACTIVITY-COEFFICIENTS FOR A REGULAR MULTICOMPONENT SOLUTION [J].

JORDAN, AS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (01) :123-&

[9]

KESSEL H, 1968, J APPL PHYS, V39, P5139

[10] ELECTROPHYSICAL PROPERTIES OF NON-DOPED EPITAXIAL GAAS IN RANGE FROM 10 TO 1100 DEGREESK [J].

KHOKHLOV, VI ;

SIDOROV, YG ;

DVORETSKII, SA .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 25 (01) :311-321

← 1 2 3 →