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DOPING BEHAVIOR OF SULFUR DURING GROWTH OF GAAS FROM VAPOR-PHASE
被引:19
作者
:
HEYEN, M
论文数:
0
引用数:
0
h-index:
0
HEYEN, M
BRUCH, H
论文数:
0
引用数:
0
h-index:
0
BRUCH, H
BACHEM, KH
论文数:
0
引用数:
0
h-index:
0
BACHEM, KH
BALK, P
论文数:
0
引用数:
0
h-index:
0
BALK, P
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1977年
/ 42卷
/ DEC期
关键词
:
D O I
:
10.1016/0022-0248(77)90184-1
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:127 / 131
页数:5
相关论文
共 26 条
[1]
INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
[J].
ASHEN, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
ASHEN, DJ
;
DEAN, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
DEAN, PJ
;
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
HURLE, DTJ
;
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
MULLIN, JB
;
WHITE, AM
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
WHITE, AM
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1975,
36
(10)
:1041
-1053
[2]
VAPOR-PHASE GROWTH OF THIN GAAS MULTILAYER STRUCTURES
[J].
BACHEM, KH
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV AACHEN,INST SEMICONDUCTOR ELECTR,SONDER FORSCH BEREICH 56,AACHEN,FED REP GER
TECH UNIV AACHEN,INST SEMICONDUCTOR ELECTR,SONDER FORSCH BEREICH 56,AACHEN,FED REP GER
BACHEM, KH
;
HEYEN, M
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV AACHEN,INST SEMICONDUCTOR ELECTR,SONDER FORSCH BEREICH 56,AACHEN,FED REP GER
TECH UNIV AACHEN,INST SEMICONDUCTOR ELECTR,SONDER FORSCH BEREICH 56,AACHEN,FED REP GER
HEYEN, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(01)
:147
-148
[3]
PHOTOMETRIC DETERMINATION OF SULFIDE AND REDUCIBLE SULFUR IN ALKALIES
[J].
BUDD, MS
论文数:
0
引用数:
0
h-index:
0
BUDD, MS
;
BEWICK, HA
论文数:
0
引用数:
0
h-index:
0
BEWICK, HA
.
ANALYTICAL CHEMISTRY,
1952,
24
(10)
:1536
-1540
[4]
GAAS GROWTH BY VAPOR-PHASE TRANSPORT .2. INTERPRETATION OF GROWTH OF (001) FACES BY ADSORPTION OF GALLIUM MONOCHLORIDE AND ARSENIC MOLECULES
[J].
CADORET, R
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
CADORET, R
;
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
HOLLAN, L
;
LOYAU, JB
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
LOYAU, JB
;
OBERLIN, M
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
OBERLIN, M
;
OBERLIN, A
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
OBERLIN, A
.
JOURNAL OF CRYSTAL GROWTH,
1975,
29
(02)
:187
-194
[5]
INFLUENCE OF SURFACE BAND BENDING ON INCORPORATION OF IMPURITIES IN SEMICONDUCTORS - TE IN GAAS
[J].
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
CASEY, HC
;
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
PANISH, MB
;
WOLFSTIRN, KB
论文数:
0
引用数:
0
h-index:
0
WOLFSTIRN, KB
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1971,
32
(03)
:571
-+
[6]
VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS
[J].
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
DILORENZO, JV
.
JOURNAL OF CRYSTAL GROWTH,
1972,
17
(DEC)
:189
-+
[7]
EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS
[J].
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
DILORENZO, JV
;
MOORE, GE
论文数:
0
引用数:
0
h-index:
0
MOORE, GE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(11)
:1823
-+
[8]
FAVENNEC PN, 1976, C MATERIAUX TECHNOLO
[9]
EFFECTS OF DEGENERACY ON DOPING EFFICIENCY FOR N-TYPE IMPLANTS IN GAAS
[J].
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
GIBBONS, JF
;
TREMAIN, RE
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
TREMAIN, RE
.
APPLIED PHYSICS LETTERS,
1975,
26
(04)
:199
-201
[10]
DIFFERENCE BETWEEN (001) FACET AND VICINAL PLANES IN VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS
[J].
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECT & PHYS APPL,3 AVE DESCARTES,94450 LIMEIL-BREVANNES,FRANCE
LAB ELECT & PHYS APPL,3 AVE DESCARTES,94450 LIMEIL-BREVANNES,FRANCE
HOLLAN, L
;
SCHILLER, C
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECT & PHYS APPL,3 AVE DESCARTES,94450 LIMEIL-BREVANNES,FRANCE
LAB ELECT & PHYS APPL,3 AVE DESCARTES,94450 LIMEIL-BREVANNES,FRANCE
SCHILLER, C
.
JOURNAL OF CRYSTAL GROWTH,
1974,
22
(03)
:175
-180
←
1
2
3
→
共 26 条
[1]
INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
[J].
ASHEN, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
ASHEN, DJ
;
DEAN, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
DEAN, PJ
;
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
HURLE, DTJ
;
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
MULLIN, JB
;
WHITE, AM
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
WHITE, AM
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1975,
36
(10)
:1041
-1053
[2]
VAPOR-PHASE GROWTH OF THIN GAAS MULTILAYER STRUCTURES
[J].
BACHEM, KH
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV AACHEN,INST SEMICONDUCTOR ELECTR,SONDER FORSCH BEREICH 56,AACHEN,FED REP GER
TECH UNIV AACHEN,INST SEMICONDUCTOR ELECTR,SONDER FORSCH BEREICH 56,AACHEN,FED REP GER
BACHEM, KH
;
HEYEN, M
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV AACHEN,INST SEMICONDUCTOR ELECTR,SONDER FORSCH BEREICH 56,AACHEN,FED REP GER
TECH UNIV AACHEN,INST SEMICONDUCTOR ELECTR,SONDER FORSCH BEREICH 56,AACHEN,FED REP GER
HEYEN, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(01)
:147
-148
[3]
PHOTOMETRIC DETERMINATION OF SULFIDE AND REDUCIBLE SULFUR IN ALKALIES
[J].
BUDD, MS
论文数:
0
引用数:
0
h-index:
0
BUDD, MS
;
BEWICK, HA
论文数:
0
引用数:
0
h-index:
0
BEWICK, HA
.
ANALYTICAL CHEMISTRY,
1952,
24
(10)
:1536
-1540
[4]
GAAS GROWTH BY VAPOR-PHASE TRANSPORT .2. INTERPRETATION OF GROWTH OF (001) FACES BY ADSORPTION OF GALLIUM MONOCHLORIDE AND ARSENIC MOLECULES
[J].
CADORET, R
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
CADORET, R
;
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
HOLLAN, L
;
LOYAU, JB
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
LOYAU, JB
;
OBERLIN, M
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
OBERLIN, M
;
OBERLIN, A
论文数:
0
引用数:
0
h-index:
0
机构:
UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE
OBERLIN, A
.
JOURNAL OF CRYSTAL GROWTH,
1975,
29
(02)
:187
-194
[5]
INFLUENCE OF SURFACE BAND BENDING ON INCORPORATION OF IMPURITIES IN SEMICONDUCTORS - TE IN GAAS
[J].
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
CASEY, HC
;
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
PANISH, MB
;
WOLFSTIRN, KB
论文数:
0
引用数:
0
h-index:
0
WOLFSTIRN, KB
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1971,
32
(03)
:571
-+
[6]
VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS
[J].
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
DILORENZO, JV
.
JOURNAL OF CRYSTAL GROWTH,
1972,
17
(DEC)
:189
-+
[7]
EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS
[J].
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
DILORENZO, JV
;
MOORE, GE
论文数:
0
引用数:
0
h-index:
0
MOORE, GE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(11)
:1823
-+
[8]
FAVENNEC PN, 1976, C MATERIAUX TECHNOLO
[9]
EFFECTS OF DEGENERACY ON DOPING EFFICIENCY FOR N-TYPE IMPLANTS IN GAAS
[J].
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
GIBBONS, JF
;
TREMAIN, RE
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
TREMAIN, RE
.
APPLIED PHYSICS LETTERS,
1975,
26
(04)
:199
-201
[10]
DIFFERENCE BETWEEN (001) FACET AND VICINAL PLANES IN VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS
[J].
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECT & PHYS APPL,3 AVE DESCARTES,94450 LIMEIL-BREVANNES,FRANCE
LAB ELECT & PHYS APPL,3 AVE DESCARTES,94450 LIMEIL-BREVANNES,FRANCE
HOLLAN, L
;
SCHILLER, C
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECT & PHYS APPL,3 AVE DESCARTES,94450 LIMEIL-BREVANNES,FRANCE
LAB ELECT & PHYS APPL,3 AVE DESCARTES,94450 LIMEIL-BREVANNES,FRANCE
SCHILLER, C
.
JOURNAL OF CRYSTAL GROWTH,
1974,
22
(03)
:175
-180
←
1
2
3
→