DOPANT INCORPORATION DURING LP-VPE OF GAAS

被引：1

作者：

VEUHOFF, E

SAUERBREY, A

PUTZ, N

HEYEN, M

BALK, P

机构：

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1982513

中图分类号：

学科分类号：

摘要：

引用

页码：101 / 110

页数：10

共 29 条

[1] VAPOR-PHASE GROWTH OF THIN GAAS MULTILAYER STRUCTURES [J].

BACHEM, KH ;

HEYEN, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) :147-148

[2] DEPOSITION OF III-V COMPOUNDS BY MO-CVD AND IN HALOGEN TRANSPORT-SYSTEMS - A CRITICAL COMPARISON [J].

BALK, P ;

VEUHOFF, E .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :35-41

[3] PHOTOMETRIC DETERMINATION OF SULFIDE AND REDUCIBLE SULFUR IN ALKALIES [J].

BUDD, MS ;

BEWICK, HA .

ANALYTICAL CHEMISTRY, 1952, 24 (10) :1536-1540

[4] INFLUENCE OF SURFACE BAND BENDING ON INCORPORATION OF IMPURITIES IN SEMICONDUCTORS - TE IN GAAS [J].

CASEY, HC ;

PANISH, MB ;

WOLFSTIRN, KB .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (03) :571-+

[5]

DESHENG J, 1982, J APPL PHYS, V52, P999

[6] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J].

DILORENZO, JV ;

MOORE, GE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1823-+

[7] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J].

DUCHEMIN, JP ;

BONNET, M ;

KOELSCH, F ;

HUYGHE, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) :1134-1149

[8] EXPERIMENTAL AND THEORETICAL-STUDY OF LOW-PRESSURE GAAS VPE IN THE CHLORIDE SYSTEM [J].

GENTNER, JL ;

BERNARD, C ;

CADORET, R .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :332-343

[9]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[10] DOPING BEHAVIOR OF SULFUR DURING GROWTH OF GAAS FROM VAPOR-PHASE [J].

HEYEN, M ;

BRUCH, H ;

BACHEM, KH ;

BALK, P .

JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) :127-131

← 1 2 3 →