EXPERIMENTAL AND THEORETICAL-STUDY OF LOW-PRESSURE GAAS VPE IN THE CHLORIDE SYSTEM

被引:31
作者
GENTNER, JL
BERNARD, C
CADORET, R
机构
[1] CNRS,ENSEEG,THERMODYN & PHYS CHIM MET LAB,F-38401 ST MARTIN DHERES,FRANCE
[2] UER SCI,CRISTALLOGRAPH LAB,LES CEZEAUX,BP 45,F-63170 AUBIERES,FRANCE
[3] UER SCI,PHYS MILIEUX CONDENSES LAB,LES CEZEAUX,BB 45,F-63170 AUBIERES,FRANCE
关键词
D O I
10.1016/0022-0248(82)90451-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:332 / 343
页数:12
相关论文
共 44 条
[1]  
BATTAT D, 1973, 371 POST OFF RES DEP
[2]  
BERNARD C, 1975, J LESS COMMON METALS, V40, P163
[3]  
BLOEM J, 1978, CURRENT TOPICS MATER, V1
[4]   THEORETICAL TREATMENT OF GAAS GROWTH BY VAPOR-PHASE TRANSPORT FOR (001) ORIENTATION [J].
CADORET, R ;
CADORET, M .
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :142-146
[5]  
CADORET R, 1980, CURRENT TOPICS MATER, V5
[7]  
CHARKIN OP, 1972, J STRUCT CHEM, V8, P450
[8]  
CHATILLON C, COMMUNICATION
[9]  
DUCARROIR M, 1975, 5TH P INT C CHEM VAP, P72
[10]   NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J].
DUCHEMIN, JP ;
BONNET, M ;
KOELSCH, F ;
HUYGHE, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) :1134-1149