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ANALYSIS OF THE MAIN FACTORS INFLUENCING THE THICKNESS UNIFORMITY OF VPE GAAS THIN-LAYERS
被引:6
作者
:
CHANE, JP
论文数:
0
引用数:
0
h-index:
0
CHANE, JP
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1980年
/ 127卷
/ 04期
关键词
:
D O I
:
10.1149/1.2129785
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:913 / 917
页数:5
相关论文
共 13 条
[1]
TRANSPORT PHENOMENA MEASUREMENTS IN EPITAXIAL REACTORS
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
: 317
-
320
[2]
BINET M, 1975, ELECTRON LETT, V24, P11
[3]
CHANE JP, 1978, Patent No. 7833831
[4]
CHANE JP, 1976, 7571489 DGRST CONTR
[5]
A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR
EVERSTEYN, FC
论文数:
0
引用数:
0
h-index:
0
EVERSTEYN, FC
SEVERIN, PJW
论文数:
0
引用数:
0
h-index:
0
SEVERIN, PJW
BREKEL, CHJV
论文数:
0
引用数:
0
h-index:
0
BREKEL, CHJV
PEEK, HL
论文数:
0
引用数:
0
h-index:
0
PEEK, HL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(07)
: 925
-
+
[6]
FAIRMAN RD, 1973, J ELECTROCHEM SOC, V120, P54
[7]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[8]
DEVICE QUALITY GAAS GROWN AT LOW-TEMPERATURE BY HALIDE PROCESS
HALLAIS, J
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
HALLAIS, J
BOCCONGIBOD, D
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
BOCCONGIBOD, D
CHANE, JP
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
CHANE, JP
DURAND, JM
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
DURAND, JM
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
HOLLAN, L
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(08)
: 1290
-
1294
[9]
INFLUENCE OF GROWTH PARAMETERS IN GAAS VAPOR-PHASE EPITAXY
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTR LAB,LIMEIL BREVANNES,FRANCE
HOLLAN, L
DURAND, JM
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTR LAB,LIMEIL BREVANNES,FRANCE
DURAND, JM
CADORET, R
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTR LAB,LIMEIL BREVANNES,FRANCE
CADORET, R
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(01)
: 135
-
139
[10]
VARIATION OF GAAS EPITAXIAL-GROWTH RATE WITH DISTANCE ALONG SUBSTRATE WITHIN A CONSTANT TEMPERATURE ZONE
KOMENO, J
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,JAPAN
FUJITSU LABS LTD,KAWASAKI,JAPAN
KOMENO, J
OHKAWA, S
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,JAPAN
FUJITSU LABS LTD,KAWASAKI,JAPAN
OHKAWA, S
MIURA, A
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,JAPAN
FUJITSU LABS LTD,KAWASAKI,JAPAN
MIURA, A
DAZAI, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,JAPAN
FUJITSU LABS LTD,KAWASAKI,JAPAN
DAZAI, K
RYUZAN, O
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,JAPAN
FUJITSU LABS LTD,KAWASAKI,JAPAN
RYUZAN, O
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(09)
: 1440
-
1443
←
1
2
→
共 13 条
[1]
TRANSPORT PHENOMENA MEASUREMENTS IN EPITAXIAL REACTORS
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
: 317
-
320
[2]
BINET M, 1975, ELECTRON LETT, V24, P11
[3]
CHANE JP, 1978, Patent No. 7833831
[4]
CHANE JP, 1976, 7571489 DGRST CONTR
[5]
A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR
EVERSTEYN, FC
论文数:
0
引用数:
0
h-index:
0
EVERSTEYN, FC
SEVERIN, PJW
论文数:
0
引用数:
0
h-index:
0
SEVERIN, PJW
BREKEL, CHJV
论文数:
0
引用数:
0
h-index:
0
BREKEL, CHJV
PEEK, HL
论文数:
0
引用数:
0
h-index:
0
PEEK, HL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(07)
: 925
-
+
[6]
FAIRMAN RD, 1973, J ELECTROCHEM SOC, V120, P54
[7]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[8]
DEVICE QUALITY GAAS GROWN AT LOW-TEMPERATURE BY HALIDE PROCESS
HALLAIS, J
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
HALLAIS, J
BOCCONGIBOD, D
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
BOCCONGIBOD, D
CHANE, JP
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
CHANE, JP
DURAND, JM
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
DURAND, JM
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
LAB ELECTR & PHYS APPL,F-94450 LIMEIL,FRANCE
HOLLAN, L
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(08)
: 1290
-
1294
[9]
INFLUENCE OF GROWTH PARAMETERS IN GAAS VAPOR-PHASE EPITAXY
HOLLAN, L
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTR LAB,LIMEIL BREVANNES,FRANCE
HOLLAN, L
DURAND, JM
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTR LAB,LIMEIL BREVANNES,FRANCE
DURAND, JM
CADORET, R
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTR LAB,LIMEIL BREVANNES,FRANCE
CADORET, R
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(01)
: 135
-
139
[10]
VARIATION OF GAAS EPITAXIAL-GROWTH RATE WITH DISTANCE ALONG SUBSTRATE WITHIN A CONSTANT TEMPERATURE ZONE
KOMENO, J
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,JAPAN
FUJITSU LABS LTD,KAWASAKI,JAPAN
KOMENO, J
OHKAWA, S
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,JAPAN
FUJITSU LABS LTD,KAWASAKI,JAPAN
OHKAWA, S
MIURA, A
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,JAPAN
FUJITSU LABS LTD,KAWASAKI,JAPAN
MIURA, A
DAZAI, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,JAPAN
FUJITSU LABS LTD,KAWASAKI,JAPAN
DAZAI, K
RYUZAN, O
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,KAWASAKI,JAPAN
FUJITSU LABS LTD,KAWASAKI,JAPAN
RYUZAN, O
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(09)
: 1440
-
1443
←
1
2
→