INFLUENCE OF GROWTH PARAMETERS IN GAAS VAPOR-PHASE EPITAXY

被引：36

作者：

HOLLAN, L

DURAND, JM

CADORET, R

机构：

[1] ELECTR LAB,LIMEIL BREVANNES,FRANCE

[2] PHYS APPL LAB,LIMEIL BREVANNES,FRANCE

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 01期

关键词：

D O I：

10.1149/1.2133227

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：135 / 139

页数：5

共 24 条

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[2] THERMODYNAMIC AND EXPERIMENTAL ASPECTS OF GALLIUM ARSENIDE VAPOR GROWTH [J].

BOUCHER, A ;

HOLLAN, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :932-&

[3] THEORETICAL TREATMENT OF GAAS GROWTH BY VAPOR-PHASE TRANSPORT FOR (001) ORIENTATION [J].

CADORET, R ;

CADORET, M .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :142-146

[4] ORIENTATION EFFECTS ON ELECTRICAL PROPERTIES OF HIGH PURITY EPITAXIAL GAAS [J].

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MACHALA, AE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) :1516-+

[5] EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J].

DILORENZO, JV ;

MOORE, GE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1823-+

[6]

DURAND JL, TO BE PUBLISHED

[7] THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION [J].

FERGUSSON, RR ;

GABOR, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (05) :585-592

[8]

HOLLAN K, 1972, J CRYST GR, V13, P319

[9] DIFFERENCE BETWEEN (001) FACET AND VICINAL PLANES IN VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS [J].

HOLLAN, L ;

SCHILLER, C .

JOURNAL OF CRYSTAL GROWTH, 1974, 22 (03) :175-180

[10]

HOLLAN L, 1973, 4TH P INT S GAAS, P217

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