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DEPOSITION OF III-V COMPOUNDS BY MO-CVD AND IN HALOGEN TRANSPORT-SYSTEMS - A CRITICAL COMPARISON
被引:9
作者
:
BALK, P
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH FESTKORPERELEKTRON 56,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH FESTKORPERELEKTRON 56,D-5100 AACHEN,FED REP GER
BALK, P
[
1
]
VEUHOFF, E
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH FESTKORPERELEKTRON 56,D-5100 AACHEN,FED REP GER
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH FESTKORPERELEKTRON 56,D-5100 AACHEN,FED REP GER
VEUHOFF, E
[
1
]
机构
:
[1]
RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH FESTKORPERELEKTRON 56,D-5100 AACHEN,FED REP GER
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1981年
/ 55卷
/ 01期
关键词
:
D O I
:
10.1016/0022-0248(81)90268-2
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:35 / 41
页数:7
相关论文
共 45 条
[1]
BACHEM KH, 1981, I PHYS C SER, V56, P65
[2]
SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Signals and Radar Establishment, Hertforshire, England, Baldock
BASS, SJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1979,
47
(5-6)
: 613
-
618
[3]
BASS SJ, 1977, I PHYS C SER, V33, P11
[4]
BENEKING H, 1980, ELECTRONIC MATERIAL
[5]
BENEKING H, UNPUBLISHED
[6]
THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS
BENZ, KW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
BENZ, KW
RENZ, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
RENZ, H
WEIDLEIN, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
WEIDLEIN, J
PILKUHN, MH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
PILKUHN, MH
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1981,
10
(01)
: 185
-
192
[7]
VAPOR GROWTH OF INP FOR MESFETS
CHEVRIER, J
论文数:
0
引用数:
0
h-index:
0
CHEVRIER, J
ARMAND, M
论文数:
0
引用数:
0
h-index:
0
ARMAND, M
HUBER, AM
论文数:
0
引用数:
0
h-index:
0
HUBER, AM
LINH, NT
论文数:
0
引用数:
0
h-index:
0
LINH, NT
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1980,
9
(04)
: 745
-
761
[8]
EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
DILORENZO, JV
MOORE, GE
论文数:
0
引用数:
0
h-index:
0
MOORE, GE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(11)
: 1823
-
+
[9]
Duchemin J.-P., 1979, INST PHYS CONF SE, V45, P10
[10]
NEW METHOD FOR THE GROWTH OF GAAS EPILAYER AT LOW H-2 PRESSURE
DUCHEMIN, JP
论文数:
0
引用数:
0
h-index:
0
DUCHEMIN, JP
BONNET, M
论文数:
0
引用数:
0
h-index:
0
BONNET, M
KOELSCH, F
论文数:
0
引用数:
0
h-index:
0
KOELSCH, F
HUYGHE, D
论文数:
0
引用数:
0
h-index:
0
HUYGHE, D
[J].
JOURNAL OF CRYSTAL GROWTH,
1978,
45
(01)
: 181
-
186
←
1
2
3
4
5
→
共 45 条
[1]
BACHEM KH, 1981, I PHYS C SER, V56, P65
[2]
SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
Royal Signals and Radar Establishment, Hertforshire, England, Baldock
BASS, SJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1979,
47
(5-6)
: 613
-
618
[3]
BASS SJ, 1977, I PHYS C SER, V33, P11
[4]
BENEKING H, 1980, ELECTRONIC MATERIAL
[5]
BENEKING H, UNPUBLISHED
[6]
THE USE OF A METALORGANIC COMPOUND FOR THE GROWTH OF INP-EPITAXIAL LAYERS
BENZ, KW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
BENZ, KW
RENZ, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
RENZ, H
WEIDLEIN, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
WEIDLEIN, J
PILKUHN, MH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST ANORGAN CHEM,D-7000 STUTTGART 80,FED REP GER
PILKUHN, MH
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1981,
10
(01)
: 185
-
192
[7]
VAPOR GROWTH OF INP FOR MESFETS
CHEVRIER, J
论文数:
0
引用数:
0
h-index:
0
CHEVRIER, J
ARMAND, M
论文数:
0
引用数:
0
h-index:
0
ARMAND, M
HUBER, AM
论文数:
0
引用数:
0
h-index:
0
HUBER, AM
LINH, NT
论文数:
0
引用数:
0
h-index:
0
LINH, NT
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1980,
9
(04)
: 745
-
761
[8]
EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
DILORENZO, JV
MOORE, GE
论文数:
0
引用数:
0
h-index:
0
MOORE, GE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(11)
: 1823
-
+
[9]
Duchemin J.-P., 1979, INST PHYS CONF SE, V45, P10
[10]
NEW METHOD FOR THE GROWTH OF GAAS EPILAYER AT LOW H-2 PRESSURE
DUCHEMIN, JP
论文数:
0
引用数:
0
h-index:
0
DUCHEMIN, JP
BONNET, M
论文数:
0
引用数:
0
h-index:
0
BONNET, M
KOELSCH, F
论文数:
0
引用数:
0
h-index:
0
KOELSCH, F
HUYGHE, D
论文数:
0
引用数:
0
h-index:
0
HUYGHE, D
[J].
JOURNAL OF CRYSTAL GROWTH,
1978,
45
(01)
: 181
-
186
←
1
2
3
4
5
→