NEW METHOD FOR THE GROWTH OF GAAS EPILAYER AT LOW H-2 PRESSURE

被引：70

作者：

DUCHEMIN, JP

BONNET, M

KOELSCH, F

HUYGHE, D

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1978年 / 45卷 / 01期

关键词：

D O I：

10.1016/0022-0248(78)90432-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：181 / 186

页数：6

共 21 条

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[7]

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[9] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J].

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