共 13 条
[2]
FRAAS LM, 1982, 16TH P IEEE PHOT SPE, P655
[3]
HARTLEY FR, 1982, CHEM METAL CARBON BO, P69
[4]
VOLATILE METAL-OXIDE INCORPORATION IN LAYERS OF GAAS AND GA1-XALXAS GROWN BY MOLECULAR-BEAM EPITAXY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1981, 19 (03)
:604-606
[7]
GAAS, GAP, AND GAAS1-XPX FILMS DEPOSITED BY MOLECULAR-BEAM EPITAXY
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1975, 31 (01)
:187-200
[9]
TAJIMA YA, 1964, PROGR ASTRON AERON, V15, P403
[10]
EFFECT OF OPERATING PRESSURE ON THE PROPERTIES OF GAAS GROWN BY LOW-PRESSURE MOCVD
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1983, 22 (12)
:L795-L797