EPITAXIAL-FILMS GROWN BY VACUUM MOCVD

被引:26
作者
FRAAS, LM
MCLEOD, PS
CAPE, JA
PARTAIN, LD
机构
关键词
D O I
10.1016/0022-0248(84)90455-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:490 / 496
页数:7
相关论文
共 13 条
[1]   KINETICS OF INTRAMOLECULAR 4-CENTER ELIMINATION OF ISOBUTYLENE FROM TRIISOBUTYLALUMINUM IN GAS PHASE [J].
EGGER, KW .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1969, 91 (11) :2867-&
[2]  
FRAAS LM, 1982, 16TH P IEEE PHOT SPE, P655
[3]  
HARTLEY FR, 1982, CHEM METAL CARBON BO, P69
[4]   VOLATILE METAL-OXIDE INCORPORATION IN LAYERS OF GAAS AND GA1-XALXAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
KIRCHNER, PD ;
WOODALL, JM ;
FREEOUF, JL ;
WOLFORD, DJ ;
PETTIT, GD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :604-606
[5]   THE GROWTH OF MAGNESIUM-DOPED GAAS BY THE OM-VPE PROCESS [J].
LEWIS, CR ;
DIETZE, WT ;
LUDOWISE, MJ .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (03) :507-524
[6]   HETEROEPITAXIAL GAAS ON ALUMINUM-OXIDE - FORMATION AND ELECTRICAL PROPERTIES OF ZN-DOPED AND CD-DOPED FILMS [J].
MANASEVIT, HM ;
THORSEN, AC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (01) :99-+
[7]   GAAS, GAP, AND GAAS1-XPX FILMS DEPOSITED BY MOLECULAR-BEAM EPITAXY [J].
NAGANUMA, M ;
TAKAHASHI, K .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (01) :187-200
[8]   SPREADING RESISTANCE MEASUREMENTS ON GALLIUM-ARSENIDE [J].
QUEIROLO, G .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) :1672-1676
[9]  
TAJIMA YA, 1964, PROGR ASTRON AERON, V15, P403
[10]   EFFECT OF OPERATING PRESSURE ON THE PROPERTIES OF GAAS GROWN BY LOW-PRESSURE MOCVD [J].
TAKAGISHI, S ;
MORI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12) :L795-L797