THE GROWTH OF MAGNESIUM-DOPED GAAS BY THE OM-VPE PROCESS

[1] DIFFUSION OF IMPURITIES IN SEMICONDUCTING SUBSTITUTIONAL SOLID SOLUTIONS INAS1-ETAPETA AND GAAS1-ETAPETA [J]. PHYSICA STATUS SOLIDI, 1969, 35 (02): : 1053 - &

[2] BIEFIELD RM, 1982, 24TH EL MAT C FORT C

[3] ABSORPTION AND STIMULATED-EMISSION IN AN ALAS-GAAS SUPER-LATTICE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (11) : 864 - 866

[4] UNEXPECTEDLY HIGH-ENERGY PHOTO-LUMINESCENCE OF HIGHLY SI DOPED GAAS GROWN BY MOVPE [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 318 - 324

[5] GAINAS AND GAINASP MATERIALS GROWN BY LOW-PRESSURE MOCVD FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 64 - 73

[6] Duke C. B., 1969, TUNNELING SOLIDS

[7] 700-H CONTINUOUS ROOM-TEMPERATURE OPERATION OF ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 311 - 314

[8] VAPOUR PRESSURES OF CYCLOPENTADIENE AND BIS(CYCLOPENTADIENYL)MAGNESIUM [J]. AUSTRALIAN JOURNAL OF CHEMISTRY, 1965, 18 (02) : 249 - &

[9] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1278 - 1287

[10] KRESSEL H, 1970, J APPL PHYS, V41, P1965

[1] DIFFUSION OF IMPURITIES IN SEMICONDUCTING SUBSTITUTIONAL SOLID SOLUTIONS INAS1-ETAPETA AND GAAS1-ETAPETA [J]. PHYSICA STATUS SOLIDI, 1969, 35 (02): : 1053 - &

[2] BIEFIELD RM, 1982, 24TH EL MAT C FORT C

[3] ABSORPTION AND STIMULATED-EMISSION IN AN ALAS-GAAS SUPER-LATTICE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (11) : 864 - 866

[4] UNEXPECTEDLY HIGH-ENERGY PHOTO-LUMINESCENCE OF HIGHLY SI DOPED GAAS GROWN BY MOVPE [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) : 318 - 324

[5] GAINAS AND GAINASP MATERIALS GROWN BY LOW-PRESSURE MOCVD FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 64 - 73

[6] Duke C. B., 1969, TUNNELING SOLIDS

[7] 700-H CONTINUOUS ROOM-TEMPERATURE OPERATION OF ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 311 - 314

[8] VAPOUR PRESSURES OF CYCLOPENTADIENE AND BIS(CYCLOPENTADIENYL)MAGNESIUM [J]. AUSTRALIAN JOURNAL OF CHEMISTRY, 1965, 18 (02) : 249 - &

[9] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1278 - 1287

[10] KRESSEL H, 1970, J APPL PHYS, V41, P1965