GAINAS AND GAINASP MATERIALS GROWN BY LOW-PRESSURE MOCVD FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS

被引：63

作者：

DUCHEMIN, JP

HIRTZ, JP

RAZEGHI, M

BONNET, M

HERSEE, SD

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 55卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90272-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：64 / 73

页数：10

相关论文

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