LOW THRESHOLD GAINASP-INP LASERS WITH GOOD TEMPERATURE-DEPENDENCE GROWN BY LOW-PRESSURE MOVPE

被引：13

作者：

HIRTZ, JP

RAZEGHI, M

LARIVAIN, JP

HERSEE, S

DUCHEMIN, JP

机构：

来源：

关键词：

D O I：

10.1049/el:19810081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：113 / 114

页数：2

共 11 条

[1] ARAI S, 1980, J QUANTUM ELECTRON, V16, P197
[2] BONNET M, 1980, 3 5 SEM INS MAT C NO, P68
[3] DUCHEMIN JP, 1978, I PHYS C SER, V45, P10
[4] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 406 - 407
[5] DUPUIS RD, 1978, I PHYS C SER, V45, P1
[6] HERSEE SD, 1980, 7TH IEEE INT SEM LAS
[7] GAXIN1-XASVP1-V-INP DH LASER EMITTING AT 1.15 MU-M GROWN BY LOW-PRESSURE METALORGANIC CVD
HIRTZ, JP
DUCHEMIN, JP
HIRTZ, P
CREMOUX, BD
PEARSALL, T
BONNET, M
[J]. ELECTRONICS LETTERS, 1980, 16 (08) : 275 - 277
[8] GROWTH OF GA0.47IN0.53AS ON INP BY LOW-PRESSURE MO CVD
HIRTZ, JP
LARIVAIN, JP
DUCHEMIN, JP
PEARSALL, TP
BONNET, M
[J]. ELECTRONICS LETTERS, 1980, 16 (11) : 415 - 416
[9] HIRTZ JP, UNPUBLISHED
[10] ROOM-TEMPERATURE OPERATION OF LATTICE-MATCHED INP-GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MBE
MILLER, BI
MCFEE, JH
MARTIN, RJ
TIEN, PK
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 44 - 47