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UNEXPECTEDLY HIGH-ENERGY PHOTO-LUMINESCENCE OF HIGHLY SI DOPED GAAS GROWN BY MOVPE
被引:39
作者
:
DRUMINSKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
GESELL STRAHLEN & UMWELTFORSCH MBH,D-8042 NEUHERBERG,FED REP GER
GESELL STRAHLEN & UMWELTFORSCH MBH,D-8042 NEUHERBERG,FED REP GER
DRUMINSKI, M
[
1
]
WOLF, HD
论文数:
0
引用数:
0
h-index:
0
机构:
GESELL STRAHLEN & UMWELTFORSCH MBH,D-8042 NEUHERBERG,FED REP GER
GESELL STRAHLEN & UMWELTFORSCH MBH,D-8042 NEUHERBERG,FED REP GER
WOLF, HD
[
1
]
ZSCHAUER, KH
论文数:
0
引用数:
0
h-index:
0
机构:
GESELL STRAHLEN & UMWELTFORSCH MBH,D-8042 NEUHERBERG,FED REP GER
GESELL STRAHLEN & UMWELTFORSCH MBH,D-8042 NEUHERBERG,FED REP GER
ZSCHAUER, KH
[
1
]
WITTMAACK, K
论文数:
0
引用数:
0
h-index:
0
机构:
GESELL STRAHLEN & UMWELTFORSCH MBH,D-8042 NEUHERBERG,FED REP GER
GESELL STRAHLEN & UMWELTFORSCH MBH,D-8042 NEUHERBERG,FED REP GER
WITTMAACK, K
[
1
]
机构
:
[1]
GESELL STRAHLEN & UMWELTFORSCH MBH,D-8042 NEUHERBERG,FED REP GER
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1982年
/ 57卷
/ 02期
关键词
:
D O I
:
10.1016/0022-0248(82)90486-9
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:318 / 324
页数:7
相关论文
共 21 条
[1]
CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
CASEY, HC
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
STERN, F
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(02)
: 631
-
643
[2]
CASEY HC, 1968, J ELECTROCHEM SOC, V114, P149
[3]
CONTACT SIZE EFFECTS ON VAN VANDERPAUW METHOD FOR RESISTIVITY AND HALL-COEFFICIENT MEASUREMENT
CHWANG, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90007
CHWANG, R
SMITH, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90007
SMITH, BJ
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90007
CROWELL, CR
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(12)
: 1217
-
1227
[4]
COMBINATION OF 2 GROWTH METHODS FOR EPITAXIAL DEPOSITION OF SILICON FILMS ON INSULATING SUBSTRATES
DRUMINSKI, M
论文数:
0
引用数:
0
h-index:
0
DRUMINSKI, M
SCHLOTTERER, H
论文数:
0
引用数:
0
h-index:
0
SCHLOTTERER, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1972,
17
(DEC)
: 249
-
+
[5]
DETECTION LIMITS OF ELEMENTS IN SPECTRA OF PREMIXED OXY-ACETYLENE FLAMES
FASSEL, VA
论文数:
0
引用数:
0
h-index:
0
FASSEL, VA
GOLIGHTLY, DW
论文数:
0
引用数:
0
h-index:
0
GOLIGHTLY, DW
[J].
ANALYTICAL CHEMISTRY,
1967,
39
(04)
: 466
-
+
[6]
THE EFFECT OF SILICON DOPING ON THE LATTICE-PARAMETER OF GALLIUM-ARSENIDE GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY AND GRADIENT-FREEZE TECHNIQUES
FEWSTER, PF
论文数:
0
引用数:
0
h-index:
0
FEWSTER, PF
WILLOUGHBY, AFW
论文数:
0
引用数:
0
h-index:
0
WILLOUGHBY, AFW
[J].
JOURNAL OF CRYSTAL GROWTH,
1980,
50
(03)
: 648
-
653
[7]
HIGH-PRESSURE PLASMAS AS SPECTROSCOPIC EMISSION SOURCES
GREENFIELD, S
论文数:
0
引用数:
0
h-index:
0
GREENFIELD, S
BERRY, CT
论文数:
0
引用数:
0
h-index:
0
BERRY, CT
JONES, IL
论文数:
0
引用数:
0
h-index:
0
JONES, IL
[J].
ANALYST,
1964,
89
(106)
: 713
-
&
[8]
ELECTRICAL AND OPTICAL PROPERTIES OF N-TYPE SI-COMPENSATED GAAS PREPARED BY LIQUID-PHASE EPITAXY
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
KRESSEL, H
NELSON, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
NELSON, H
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(09)
: 3720
-
&
[9]
LIN AL, 1977, 6TH P INT C CVD, P264
[10]
METTLER K, UNPUB
←
1
2
3
→
共 21 条
[1]
CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
CASEY, HC
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
STERN, F
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(02)
: 631
-
643
[2]
CASEY HC, 1968, J ELECTROCHEM SOC, V114, P149
[3]
CONTACT SIZE EFFECTS ON VAN VANDERPAUW METHOD FOR RESISTIVITY AND HALL-COEFFICIENT MEASUREMENT
CHWANG, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90007
CHWANG, R
SMITH, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90007
SMITH, BJ
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90007
CROWELL, CR
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(12)
: 1217
-
1227
[4]
COMBINATION OF 2 GROWTH METHODS FOR EPITAXIAL DEPOSITION OF SILICON FILMS ON INSULATING SUBSTRATES
DRUMINSKI, M
论文数:
0
引用数:
0
h-index:
0
DRUMINSKI, M
SCHLOTTERER, H
论文数:
0
引用数:
0
h-index:
0
SCHLOTTERER, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1972,
17
(DEC)
: 249
-
+
[5]
DETECTION LIMITS OF ELEMENTS IN SPECTRA OF PREMIXED OXY-ACETYLENE FLAMES
FASSEL, VA
论文数:
0
引用数:
0
h-index:
0
FASSEL, VA
GOLIGHTLY, DW
论文数:
0
引用数:
0
h-index:
0
GOLIGHTLY, DW
[J].
ANALYTICAL CHEMISTRY,
1967,
39
(04)
: 466
-
+
[6]
THE EFFECT OF SILICON DOPING ON THE LATTICE-PARAMETER OF GALLIUM-ARSENIDE GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY AND GRADIENT-FREEZE TECHNIQUES
FEWSTER, PF
论文数:
0
引用数:
0
h-index:
0
FEWSTER, PF
WILLOUGHBY, AFW
论文数:
0
引用数:
0
h-index:
0
WILLOUGHBY, AFW
[J].
JOURNAL OF CRYSTAL GROWTH,
1980,
50
(03)
: 648
-
653
[7]
HIGH-PRESSURE PLASMAS AS SPECTROSCOPIC EMISSION SOURCES
GREENFIELD, S
论文数:
0
引用数:
0
h-index:
0
GREENFIELD, S
BERRY, CT
论文数:
0
引用数:
0
h-index:
0
BERRY, CT
JONES, IL
论文数:
0
引用数:
0
h-index:
0
JONES, IL
[J].
ANALYST,
1964,
89
(106)
: 713
-
&
[8]
ELECTRICAL AND OPTICAL PROPERTIES OF N-TYPE SI-COMPENSATED GAAS PREPARED BY LIQUID-PHASE EPITAXY
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
KRESSEL, H
NELSON, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
NELSON, H
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(09)
: 3720
-
&
[9]
LIN AL, 1977, 6TH P INT C CVD, P264
[10]
METTLER K, UNPUB
←
1
2
3
→