THE EFFECT OF SILICON DOPING ON THE LATTICE-PARAMETER OF GALLIUM-ARSENIDE GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY AND GRADIENT-FREEZE TECHNIQUES

被引：28

作者：

FEWSTER, PF

WILLOUGHBY, AFW

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 50卷 / 03期

关键词：

D O I：

10.1016/0022-0248(80)90009-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：648 / 653

页数：6

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