DIFFUSION OF IMPURITIES IN SEMICONDUCTING SUBSTITUTIONAL SOLID SOLUTIONS INAS1-ETAPETA AND GAAS1-ETAPETA

A break was found in the dependence of the diffusion coefficient of zinc on the composition of GaAs1−ηPη at a phosphorus content in the solid solution η ≈ 0.4. The same break is observed in the dependence of the Fermi level on the composition of GaAs1−ηPη. The experimental data obtained agree with the theory. The diffusion of zinc in inhomogeneous solid solutions of GaAs1−ηPη (gradual heretojunctions) was found to increase which can be attributed to the effect of an internal electric field produced by a gradient in the hetero‐junction energy gap width as well as to a coordinate dependence of the zinc diffusion coefficient. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim