VOLATILE METAL-OXIDE INCORPORATION IN LAYERS OF GAAS AND GA1-XALXAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：14

作者：

KIRCHNER, PD ^{[1
]}

WOODALL, JM ^{[1
]}

FREEOUF, JL ^{[1
]}

WOLFORD, DJ ^{[1
]}

PETTIT, GD ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：604 / 606

页数：3

共 13 条

[1] PHOTOLUMINESCENCE STUDIES OF VACANCIES AND VACANCY-IMPURITY COMPLEXES IN ANNEALED GAAS
CHIANG, SY
PEARSON, GL
[J]. JOURNAL OF LUMINESCENCE, 1975, 10 (05) : 313 - 322
[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[3] MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY
CHO, AY
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5118 - 5123
[4] VAPOR PRESSURE OF GALLIUM, STABILITY OF GALLIUM SUBOXIDE VAPOR, AND EQUILIBRIA OF SOME REACTIONS PRODUCING GALLIUM SUBOXIDE VAPOR
COCHRAN, CN
FOSTER, LM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) : 144 - 148
[5] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS
CUSANO, DA
[J]. SOLID STATE COMMUNICATIONS, 1964, 2 (11) : 353 - 358
[6] VAPORIZATION OF ALUMINUM ARSENIDE
HOCH, M
HINGE, KS
[J]. JOURNAL OF CHEMICAL PHYSICS, 1961, 35 (02) : 451 - &
[7] GROWTH AND DOPING KINETICS IN MOLECULAR-BEAM EPITAXY
JOYCE, BA
FOXON, CT
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 17 - 23
[8] VOLATILE METAL-OXIDE INCORPORATION IN LAYERS OF GAAS, GA1-XALXAS AND RELATED-COMPOUNDS GROWN BY MOLECULAR-BEAM EPITAXY
KIRCHNER, PD
WOODALL, JM
FREEOUF, JL
PETTIT, GD
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 427 - 429
[9] GROWTH TEMPERATURE-DEPENDENCE IN MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE
MUROTANI, T
SHIMANOE, T
MITSUI, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 302 - 308
[10] IMPURITY DOPING EFFECT OF MOLECULAR-BEAM EPITAXIAL GAAS FILMS
NAGANUMA, M
TAKAHASHI, K
[J]. ELECTRICAL ENGINEERING IN JAPAN, 1974, 94 (05) : 15 - 21

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