IMPURITY DOPING EFFECT OF MOLECULAR-BEAM EPITAXIAL GAAS FILMS

被引：1

作者：

NAGANUMA, M ^{[1
]}

TAKAHASHI, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,FAC ENGN,TOKYO,JAPAN

来源：

ELECTRICAL ENGINEERING IN JAPAN | 1974年 / 94卷 / 05期

关键词：

D O I：

10.1002/eej.4390940503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：15 / 21

页数：7

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共 21 条

[1] ADSORPTION OF ZN ON GAAS
ARTHUR, JR
[J]. SURFACE SCIENCE, 1973, 38 (02) : 394 - 412
[2] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION
ARTHUR, JR
LEPORE, JJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 545 - &
[3] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES
ARTHUR, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &
[4] ANALYSIS OF THE RESIDUAL GASES IN SEVERAL TYPES OF HIGH-VACUUM EVAPORATORS
CASWELL, HL
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (02) : 130 - 142
[5] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &
[6] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS
CHO, AY
HAYASHI, I
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4422 - &
[7] MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY
CHO, AY
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5118 - 5123
[8] DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF LI IN GAAS SINGLE CRYSTALS
FULLER, CS
WOLFSTIRN, KB
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) : 2507 - &
[9] Hansen M., 1958, Constitution of Binary Alloys
[10] HAYASHI, 1973, VACUUM, V16, P91