DETERMINATION OF MINIMUM ARSENIC PRESSURE FOR MOLECULAR-BEAM EPITAXY OF GA1-YINYAS/GAAS AND GA1-XALXAS

被引：6

作者：

HARMAND, JC

ALEXANDRE, F

BEERENS, J

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1987年 / 22卷 / 08期

关键词：

D O I：

10.1051/rphysap:01987002208082100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：821 / 825

页数：5

共 7 条

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[5] VAPOR-PRESSURES OF ARSENIC OVER INAS(C) AND GAAS (C) - ENTHALPIES OF FORMATION OF INAS(C) AND GAAS(C) [J].

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POTTIE, RF .

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[6]

TURCO F, IN PRESS REV PHYS AP

[7] PHOTOLUMINESCENCE OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

WICKS, G ;

WANG, WI ;

WOOD, CEC ;

EASTMAN, LF ;

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JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5792-5796

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