HIGH-QUALITY EPITAXIAL GAAS AND INP WAFERS BY ISOELECTRONIC DOPING

被引：68

作者：

BENEKING, H

NAROZNY, P

EMEIS, N

机构：

来源：

关键词：

D O I：

10.1063/1.95998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：828 / 830

页数：3

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