EFFECT OF GROUP-V/III FLUX RATIO ON LIGHTLY SI-DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：12

作者：

NOMURA, Y

MANNOH, M

MIHARA, M

NARITSUKA, S

YAMANAKA, K

YUASA, T

ISHII, M

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 11期

关键词：

D O I：

10.1149/1.2115373

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2630 / 2633

页数：4

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