STRUCTURE AND STOICHIOMETRY OF (100)-GAAS SURFACES DURING MOLECULAR-BEAM EPITAXY

[1] GAAS(100) - ITS SPECTRUM, EFFECTIVE CHARGE, AND RECONSTRUCTION PATTERNS [J]. PHYSICAL REVIEW B, 1976, 14 (04): : 1623 - 1632

[2] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &

[3] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461

[4] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05): : 655 - 662

[5] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[6] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 2841 - 2843

[7] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &

[8] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4422 - &

[9] INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J]. SURFACE SCIENCE, 1977, 64 (01) : 293 - 304

[10] INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE [J]. SURFACE SCIENCE, 1975, 50 (02) : 434 - 450

[1] GAAS(100) - ITS SPECTRUM, EFFECTIVE CHARGE, AND RECONSTRUCTION PATTERNS [J]. PHYSICAL REVIEW B, 1976, 14 (04): : 1623 - 1632

[2] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &

[3] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461

[4] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05): : 655 - 662

[5] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[6] BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 2841 - 2843

[7] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &

[8] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4422 - &

[9] INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J]. SURFACE SCIENCE, 1977, 64 (01) : 293 - 304

[10] INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE [J]. SURFACE SCIENCE, 1975, 50 (02) : 434 - 450