TEMPERATURE-DEPENDENCE OF MOLECULAR-BEAM EPITAXIAL-GROWTH RATES FOR INXGA1-XAS AND INXAL1-XAS

被引：32

作者：

CHIKA, S

KATO, H

NAKAYAMA, M

SANO, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 09期

关键词：

D O I：

10.1143/JJAP.25.1441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1441 / 1442

页数：2

相关论文

共 8 条

[1] INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES
FISCHER, R
KLEM, J
DRUMMOND, TJ
THORNE, RE
KOPP, W
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2508 - 2510
[2] PREFERENTIAL EVAPORATION OF IN FROM GAXIN1-XAS
GOLDSTEIN, B
SZOSTAK, D
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (12) : 685 - 687
[3] THERMODYNAMIC ASPECTS OF MOLECULAR-BEAM EPITAXY - HIGH-TEMPERATURE GROWTH IN THE GAAS/GA1-XALXAS SYSTEM
HECKINGBOTTOM, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 572 - 575
[4] LAYER-BY-LAYER SUBLIMATION OBSERVED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION IN A MOLECULAR-BEAM EPITAXY SYSTEM
KOJIMA, T
KAWAI, NJ
NAKAGAWA, T
OHTA, K
SAKAMOTO, T
KAWASHIMA, M
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 286 - 288
[5] NEAVE JH, 1983, APPL PHYS A, V30, P1
[6] VAPOR-PRESSURES OF ARSENIC OVER INAS(C) AND GAAS (C) - ENTHALPIES OF FORMATION OF INAS(C) AND GAAS(C)
PUPP, C
MURRAY, JJ
POTTIE, RF
[J]. JOURNAL OF CHEMICAL THERMODYNAMICS, 1974, 6 (02) : 123 - 134
[7] MONO-LAYER AND BI-LAYER SUPERLATTICES OF GAAS AND ALAS
SANO, N
KATO, H
NAKAYAMA, M
CHIKA, S
TERAUCHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L640 - L641
[8] MASS-ACTION CONTROL OF ALGAAS AND GAAS GROWTH IN MOLECULAR-BEAM EPITAXY
VANHOVE, JM
COHEN, PI
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 726 - 728