THERMODYNAMIC ASPECTS OF MOLECULAR-BEAM EPITAXY - HIGH-TEMPERATURE GROWTH IN THE GAAS/GA1-XALXAS SYSTEM

被引：87

作者：

HECKINGBOTTOM, R

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583182

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：572 / 575

页数：4

共 22 条

[1] THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ANDREWS, DA ;

HECKINGBOTTOM, R ;

DAVIES, GJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4421-4425

[2] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].

ARTHUR, JR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&

[3] THE EFFECT OF ARSENIC SPECIES ON THE MINORITY-CARRIER PROPERTIES OF (ALGA) AS-GAAS DOUBLE HETEROSTRUCTURES GROWN BY MBE [J].

DUGGAN, G ;

DAWSON, P ;

FOXON, CT ;

THOOFT, GW .

JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :129-134

[4] GROWTH OF AL0.3GA0.7AS BY MOLECULAR-BEAM EPITAXY IN THE FORBIDDEN TEMPERATURE-RANGE USING AS-2 [J].

ERICKSON, LP ;

MATTORD, TJ ;

PALMBERG, PW ;

FISCHER, R ;

MORKOC, H .

ELECTRONICS LETTERS, 1983, 19 (16) :632-633

[5] INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES [J].

FISCHER, R ;

KLEM, J ;

DRUMMOND, TJ ;

THORNE, RE ;

KOPP, W ;

MORKOC, H ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2508-2510

[6] INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J].

FOXON, CT ;

JOYCE, BA .

SURFACE SCIENCE, 1977, 64 (01) :293-304

[7] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J].

FOXON, CT ;

HARVEY, JA ;

JOYCE, BA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) :1693-&

[8] INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE [J].

FOXON, CT ;

JOYCE, BA .

SURFACE SCIENCE, 1975, 50 (02) :434-450

[9] GERMANIUM DOPING OF GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY SOME THERMODYNAMIC ASPECTS [J].

HECKINGBOTTOM, R ;

DAVIES, GJ .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) :644-647

[10] INTERPLAY OF THERMODYNAMICS AND KINETICS IN MOLECULAR-BEAM EPITAXY (MBE) OF DOPED GALLIUM-ARSENIDE [J].

HECKINGBOTTOM, R ;

TODD, CJ ;

DAVIES, GJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :444-450

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