THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：25

作者：

ANDREWS, DA

HECKINGBOTTOM, R

DAVIES, GJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 08期

关键词：

D O I：

10.1063/1.332636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4421 / 4425

页数：5

共 21 条

[1] APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS [J].

AMBRIDGE, T ;

STEVENSON, JL ;

REDSTALL, RM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :222-228

[2] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].

ARTHUR, JR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&

[3] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J].

CHAI, YG ;

WOOD, CEC ;

CHOW, R .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :800-803

[4]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[5] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735

[6] SN AND TE DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS USING A SNTE SOURCE [J].

COLLINS, DM ;

MILLER, JN ;

CHAI, YG ;

CHOW, R .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3010-3018

[7] USE OF SNTE AS THE SOURCE OF DONOR IMPURITIES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

COLLINS, DM .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :67-70

[8] ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

DAVIES, GJ ;

ANDREWS, DA ;

HECKINGBOTTOM, R .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7214-7218

[9]

DAVIES GJ, UNPUB VACUUM

[10] GERMANIUM DOPING OF GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY SOME THERMODYNAMIC ASPECTS [J].

HECKINGBOTTOM, R ;

DAVIES, GJ .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) :644-647

← 1 2 3 →