INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES

被引：86

作者：

FISCHER, R ^{[1
]}

KLEM, J ^{[1
]}

DRUMMOND, TJ ^{[1
]}

THORNE, RE ^{[1
]}

KOPP, W ^{[1
]}

MORKOC, H ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.332317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2508 / 2510

页数：3

共 7 条

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[6] INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE MORPHOLOGY OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[7] PHOTOLUMINESCENCE OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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