MASS-ACTION CONTROL OF ALGAAS AND GAAS GROWTH IN MOLECULAR-BEAM EPITAXY

被引：86

作者：

VANHOVE, JM

COHEN, PI

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.96017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：726 / 728

页数：3

共 12 条

[1] FISHER R, 1983, J APPL PHYS, V54, P2508
[2] THERMODYNAMIC ASPECTS OF MOLECULAR-BEAM EPITAXY - HIGH-TEMPERATURE GROWTH IN THE GAAS/GA1-XALXAS SYSTEM
HECKINGBOTTOM, R
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[3] PREFERENTIAL DESORPTION OF GA FROM ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06): : L351 - L353
[4] DIFFRACTION FROM STEPPED SURFACES .1. REVERSIBLE SURFACES
LENT, CS
COHEN, PI
[J]. SURFACE SCIENCE, 1984, 139 (01) : 121 - 154
[5] PUKITE PR, SURF SCI
[6] VAPOR-PRESSURES OF ARSENIC OVER INAS(C) AND GAAS (C) - ENTHALPIES OF FORMATION OF INAS(C) AND GAAS(C)
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POTTIE, RF
[J]. JOURNAL OF CHEMICAL THERMODYNAMICS, 1974, 6 (02) : 123 - 134
[7] NONSTOICHIOMETRY AND CARRIER CONCENTRATION CONTROL IN MBE OF COMPOUND SEMICONDUCTORS
SMITH, DL
[J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2): : 33 - 47
[8] DISORDER ON GAAS(001) SURFACES PREPARED BY MOLECULAR-BEAM EPITAXY
VANHOVE, JM
COHEN, PI
LENT, CS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (02): : 546 - 550
[9] DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE
VANHOVE, JM
LENT, CS
PUKITE, PR
COHEN, PI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 741 - 746
[10] THE DEPENDENCE OF RHEED OSCILLATIONS ON MBE GROWTH-PARAMETERS
VANHOVE, JM
PUKITE, PR
COHEN, PI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 563 - 567

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