GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：88

作者：

FEKETA, D

CHAN, KT

BALLANTYNE, JM

EASTMAN, LF

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 24期

关键词：

D O I：

10.1063/1.97258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1659 / 1660

页数：2

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[6] HIGH EXTERNAL EFFICIENCY (36-PERCENT) 5-MU-M MESA ISOLATED GAAS QUANTUM WELL LASER BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
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