INGAAS/ALGAAS STRAINED SINGLE QUANTUM-WELL DIODE-LASERS WITH EXTREMELY LOW THRESHOLD CURRENT-DENSITY AND HIGH-EFFICIENCY

Graded-index separate-confinement heterostructure InGaAs/AlGaAs single quantum well diode lasers emitting at 1.02 μm have been fabricated from structures grown by organometallic vapor phase epitaxy. Under pulsed operation, threshold current densities as low as 65 A/cm2, the lowest reported for InGaAs/AsGaAs lasers, have been obtained for a cavity length L of 1500 μm. Differential quantum efficiencies as high as 90% have been obtained for L=300 μm. Output powers as high as 1.6 W per facet and power conversion efficiencies as high as 47% have been obtained for continuous operation of uncoated lasers with L=1000 μm.