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980-NM DIODE-LASER FOR PUMPING ER3+-DOPED FIBER AMPLIFIERS

被引：24
作者：
BOUR, DP
DINKEL, NA
GILBERT, DB
FABIAN, KB
HARVEY, MG
机构：
[1] David Sarnoff Research Center, Princeton
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 03期
关键词：
D O I：
10.1109/68.50872
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 980 nm diode laser, whose performance satisfies the requirements for pumping Er3+-doped optical fiber amplifiers, is described. The device is grown by atmospheric pressure organometallic vapor phase epitaxy, and contains a strained, step-graded In0.25Ga0.75As/ AIGaAs single quantum well active region. The threshold current of the ridge-waveguide laser is 8 mA, and a CW power output of 125 mW is demonstrated, with a differential quantum efficiency of 59%. © 1990 IEEE
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页码：153 / 155
页数：3
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