HIGH-POWER CONVERSION EFFICIENCY IN A STRAINED INGAAS/ALGAAS QUANTUM WELL LASER

被引:36
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BOUR, DP
EVANS, GA
GILBERT, DB
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10.1063/1.342646
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O59 [应用物理学];
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页码:3340 / 3343
页数:4
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共 19 条
[1]   PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY MEASUREMENTS ON BAND-EDGE OFFSETS IN STRAINED MOLECULAR-BEAM-EPITAXY-GROWN INX GA1-XAS/GAAS QUANTUM WELLS [J].
ANDERSSON, TG ;
CHEN, ZG ;
KULAKOVSKII, VD ;
UDDIN, A ;
VALLIN, JT .
PHYSICAL REVIEW B, 1988, 37 (08) :4032-4038
[2]   VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].
ANDERSSON, TG ;
CHEN, ZG ;
KULAKOVSKII, VD ;
UDDIN, A ;
VALLIN, JT .
APPLIED PHYSICS LETTERS, 1987, 51 (10) :752-754
[3]   HIGH-POWER PHASE-LOCKED INGAAS STRAINED-LAYER QUANTUM WELL HETEROSTRUCTURE PERIODIC LASER ARRAY [J].
BAILLARGEON, JN ;
YORK, PK ;
ZMUDZINSKI, CA ;
FERNANDEZ, GE ;
BEERNINK, KJ ;
COLEMAN, JJ .
APPLIED PHYSICS LETTERS, 1988, 53 (06) :457-459
[4]   CONTINUOUS, HIGH-POWER OPERATION OF A STRAINED INGAAS/ALGAAS QUANTUM WELL LASER [J].
BOUR, DP ;
GILBERT, DB ;
ELBAUM, L ;
HARVEY, MG .
APPLIED PHYSICS LETTERS, 1988, 53 (24) :2371-2373
[5]   STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES [J].
CAMRAS, MD ;
BROWN, JM ;
HOLONYAK, N ;
NIXON, MA ;
KALISKI, RW ;
LUDOWISE, MJ ;
DIETZE, WT ;
LEWIS, CR .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6183-6189
[6]   GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
FEKETA, D ;
CHAN, KT ;
BALLANTYNE, JM ;
EASTMAN, LF .
APPLIED PHYSICS LETTERS, 1986, 49 (24) :1659-1660
[7]   RIDGE WAVE-GUIDE INJECTION-LASER WITH A GALNAS STRAINED-LAYER QUANTUM-WELL (LAMBDA=1-MU-M) [J].
FISCHER, SE ;
FEKETE, D ;
FEAK, GB ;
BALLANTYNE, JM .
APPLIED PHYSICS LETTERS, 1987, 50 (12) :714-716
[8]   DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].
FRITZ, IJ ;
PICRAUX, ST ;
DAWSON, LR ;
DRUMMOND, TJ ;
LAIDIG, WD ;
ANDERSON, NG .
APPLIED PHYSICS LETTERS, 1985, 46 (10) :967-969
[9]  
GAVRILOVIC P, 1988, 11TH IEEE INT SEM LA, P156
[10]   BAND-TO-BAND AUGER RECOMBINATION IN SEMICONDUCTORS [J].
HAUG, A .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1988, 49 (06) :599-605