CONTINUOUS, HIGH-POWER OPERATION OF A STRAINED INGAAS/ALGAAS QUANTUM WELL LASER

被引：29

作者：

BOUR, DP

GILBERT, DB

ELBAUM, L

HARVEY, MG

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 24期

关键词：

D O I：

10.1063/1.100233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2371 / 2373

页数：3

共 21 条

[1] PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY MEASUREMENTS ON BAND-EDGE OFFSETS IN STRAINED MOLECULAR-BEAM-EPITAXY-GROWN INX GA1-XAS/GAAS QUANTUM WELLS [J].

ANDERSSON, TG ;

CHEN, ZG ;

KULAKOVSKII, VD ;

UDDIN, A ;

VALLIN, JT .

PHYSICAL REVIEW B, 1988, 37 (08) :4032-4038

[2] HIGH-POWER PHASE-LOCKED INGAAS STRAINED-LAYER QUANTUM WELL HETEROSTRUCTURE PERIODIC LASER ARRAY [J].

BAILLARGEON, JN ;

YORK, PK ;

ZMUDZINSKI, CA ;

FERNANDEZ, GE ;

BEERNINK, KJ ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1988, 53 (06) :457-459

[3] STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES [J].

CAMRAS, MD ;

BROWN, JM ;

HOLONYAK, N ;

NIXON, MA ;

KALISKI, RW ;

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DIETZE, WT ;

LEWIS, CR .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6183-6189

[4] CALCULATION OF AUGER RATES IN A QUANTUM WELL STRUCTURE AND ITS APPLICATION TO INGAASP QUANTUM WELL LASERS [J].

DUTTA, NK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1236-1245

[5] GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FEKETA, D ;

CHAN, KT ;

BALLANTYNE, JM ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1986, 49 (24) :1659-1660

[6] RIDGE WAVE-GUIDE INJECTION-LASER WITH A GALNAS STRAINED-LAYER QUANTUM-WELL (LAMBDA=1-MU-M) [J].

FISCHER, SE ;

FEKETE, D ;

FEAK, GB ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :714-716

[7] CRITICAL LAYER THICKNESS IN IN0.2GA0.8AS/GAAS SINGLE STRAINED QUANTUM-WELL STRUCTURES [J].

FRITZ, IJ ;

GOURLEY, PL ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1987, 51 (13) :1004-1006

[8]

GOBEL EO, 1985, APPL PHYS LETT, V47, P781, DOI 10.1063/1.96036

[9] HIGH-POWER OPERATION IN INGAAS SEPARATE CONFINEMENT HETEROSTRUCTURE QUANTUM WELL LASER-DIODES [J].

KITAMURA, M ;

TAKANO, S ;

SASAKI, T ;

YAMADA, H ;

MITO, I .

APPLIED PHYSICS LETTERS, 1988, 53 (01) :1-3

[10] EFFECTS OF WELL NUMBER, CAVITY LENGTH, AND FACET REFLECTIVITY ON THE REDUCTION OF THRESHOLD CURRENT OF GAAS/ALGAAS MULTIQUANTUM WELL LASERS [J].

KUROBE, A ;

FURUYAMA, H ;

NARITSUKA, S ;

SUGIYAMA, N ;

KOKUBUN, Y ;

NAKAMURA, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (04) :635-639

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