SINGLE-LONGITUDINAL-MODE METALORGANIC CHEMICAL-VAPOR-DEPOSITION SELF-ALIGNED GAALAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS

被引：41

作者：

COLEMAN, JJ

DAPKUS, PD

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 03期

关键词：

D O I：

10.1063/1.91900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：262 / 263

页数：2

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共 17 条

[1] TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE [J].

AIKI, K ;

NAKAMURA, M ;

KURODA, T ;

UMEDA, J ;

ITO, R ;

CHINONE, N ;

MAEDA, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) :89-94

[2] SINGLE-MODE CW OPERATION OF DOUBLE-DOVETAIL CONSTRICTED DH (ALGA) ASDIODE LASERS [J].

BOTEZ, D .

APPLIED PHYSICS LETTERS, 1978, 33 (10) :872-874

[3] GROWTH-CHARACTERISTICS OF GAAS-GA1-XALXAS STRUCTURES FABRICATED BY LIQUID-PHASE EPITAXY OVER PREFERENTIALLY ETCHED CHANNELS [J].

BOTEZ, D ;

TSANG, WT ;

WANG, S .

APPLIED PHYSICS LETTERS, 1976, 28 (04) :234-237

[4] ETCHED BURIED HETEROSTRUCTURE GAAS-GAALAS INJECTION LASERS [J].

BURNHAM, RD ;

SCIFRES, DR .

APPLIED PHYSICS LETTERS, 1975, 27 (09) :510-511

[5] STRIPED-SUBSTRATE DOUBLE-HETEROSTRUCTURE LASERS [J].

BURNHAM, RD ;

SCIFRES, DR ;

TRAMONTANA, JC ;

ALIMONDA, AS .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :418-420

[6] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1978, 32 (07) :406-407

[7] SINGLE-LONGITUDINAL-MODE CW ROOM-TEMPERATURE GA1-XALXAS-GAAS CHANNEL-GUIDE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :724-726

[8] VERY LOW THRESHOLD GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METAL ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :473-475

[9] ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD ;

HOLONYAK, N ;

REZEK, EA ;

CHIN, R .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :295-297

[10] CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE GAAS-(GAAL)AS INJECTION-LASERS [J].

KIRKBY, PA ;

THOMPSON, GHB .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4578-4589