LOW-TEMPERATURE RESISTIVITY OF VALENCE FLUCTUATION COMPOUND SMB6

被引：23

作者：

BATKO, I ^{[1
]}

FARKASOVSKY, P ^{[1
]}

FLACHBART, K ^{[1
]}

KONOVALOVA, ES ^{[1
]}

PADERNO, YB ^{[1
]}

机构：

[1] INST MAT PROBLEMS, KIEV 252680, UKRAINE

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 88卷 / 05期

关键词：

D O I：

10.1016/0038-1098(93)90234-E

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electrical resistivity of SmB6 single crystal has been measured down to 50 mK. At temperatures below 3 K a rather complicated behavior of electrical conductivity including the temperature activated and temperature non-activated term was observed. The activated conductivity term can be well described by sigma = c exp [-(T0/T)x] with x equal to or close to 1 and T0 = 2.68 K, while the non-activated conductivity is dominating below about 0.2 K and shows presence of the logarithmic Kondo-like contribution to resistivity. To explain observed results a model based on introducing a fine structure into the hybridization gap is proposed. This fine structure may consist of two narrow low-density bands with a gap between them of few tenths of meV wide.

引用

页码：405 / 410

页数：6

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