ELECTRICAL PASSIVATION IN HYDROGEN PLASMA EXPOSED GAN

被引：31

作者：

PEARTON, SJ ^{[1
]}

ABERNATHY, CR ^{[1
]}

REN, F ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 06期

关键词：

PLASMA DEPOSITION; PASSIVATION; MOLECULAR BEAM EPITAXIAL;

D O I：

10.1049/el:19940327

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lightly p-doped (3 x 10(17) cm-3) GaN grown on GaAs substrates by metal organic molecular beam epitaxy (MOMBE) shows deactivation of the residual acceptors on exposure to a microwave (2.45GHz) hydrogen plasma at 250-degrees-C. Subsequent annealing to 350-degrees-C produces further dopant passivation, while higher temperatures (450-degrees-C) restore the initial conductivity. These results suggest that hydrogen carrier gases should be avoided during vapour phase growth of III-V nitrides.

引用

页码：527 / 528

页数：2

共 8 条

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