NOTE ON THE INTERPRETATION OF INJECTION-LEVEL-DEPENDENT SURFACE RECOMBINATION VELOCITIES

被引：39

作者：

BRENDEL, R

机构：

[1] Max-Planck-Institut für Festkörperforschung, Stuttgart, D-70569

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1995年 / 60卷 / 05期

关键词：

D O I：

10.1007/BF01538780

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The surface recombination velocity S - U/n is defined as the ratio between the surface recombination current density U and the excess minority carrier concentration n at the semiconductor surface. Measurements of injection-dependent surface recombination velocities apply modulation techniques, and thus, in reality, a differential surface recombination velocity S-diff = dU/dn is determined. The significance to distinguish S and S-diff when evaluating measurements is shown.

引用

页码：523 / 524

页数：2

共 7 条

[1] IMPACT OF ILLUMINATION LEVEL AND OXIDE PARAMETERS ON SHOCKLEY-READ-HALL RECOMBINATION AT THE SI-SIO2 INTERFACE
ABERLE, AG
GLUNZ, S
WARTA, W
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) : 4422 - 4431
[2] EFFECTS OF CERTAIN CHEMICAL TREATMENTS AND AMBIENT ATMOSPHERES ON SURFACE PROPERTIES OF SILICON
BUCK, TM
MCKIM, FS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) : 709 - 714
[3] CALCULATION OF SURFACE GENERATION AND RECOMBINATION VELOCITIES AT THE SI-SIO2 INTERFACE
EADES, WD
SWANSON, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4267 - 4276
[4] DETERMINATION OF SI-SIO2 INTERFACE RECOMBINATION PARAMETERS USING A GATE-CONTROLLED POINT-JUNCTION DIODE UNDER ILLUMINATION
GIRISCH, RBM
MERTENS, RP
DEKEERSMAECKER, RF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (02) : 203 - 222
[5] INJECTION-LEVEL-DEPENDENT RECOMBINATION VELOCITIES AT THE SI-SIO2 INTERFACE FOR VARIOUS DOPANT CONCENTRATIONS
GLUNZ, SW
SPROUL, AB
WARTA, W
WETTLING, W
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) : 1611 - 1615
[6] NOMURA H, 1993, 7TH INTERNATIONAL PHOTOVOLTAIC SCIENCE AND ENGINEERING CONFERENCE, TECHNICAL DIGEST, P223
[7] STEPHENS AW, 1994, J APPL PHYS, V76, P368

← 1 →