HELICON-WAVE-EXCITED PLASMA TREATMENT OF SIOX FILMS EVAPORATED ON SI SUBSTRATE

被引：7

作者：

KITAYAMA, D

NAGASAWA, H

KITAJIMA, H

OKAMOTO, Y

IKOMA, H

机构：

[1] Science University of Tokyo, Noda, Chiba

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9A期

关键词：

SILICON; OXIDE; EVAPORATION; OXYGEN-PLASMA TREATMENT; C-V MEASUREMENT; X-RAY PHOTOELECTRON SPECTROSCOPY;

D O I：

10.1143/JJAP.34.4747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new approach to low-temperature growth of Si oxide was discussed in which SIOx was first vacuum-evaporated on Si substrate and then treated in a magnetically excited oxygen plasma (helicon wave) at room temperature. Fairly thick oxide film was obtained. However, the quality of the oxide film was somewhat inferior to those of the oxide grown by direct oxidation of Si with helicon-wave-excited plasma.

引用

页码：4747 / 4748

页数：2

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