CHARACTERISTICS AND APPLICATIONS OF DOMAINS IN SEMICONDUCTING CDS

被引：10

作者：

BUTLER, MBN

SANDBANK, CP

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 10期

关键词：

D O I：

10.1109/T-ED.1967.16085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：663 / +

页数：1

共 14 条

[1] A SIMPLE ANALYSIS OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].

BUTCHER, PN ;

FAWCETT, W ;

HILSUM, C .

BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (07) :841-&

[2] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J].

GUNN, JB .

SOLID STATE COMMUNICATIONS, 1963, 1 (04) :88-91

[3] ACOUSTIC AMPLIFICATION IN SEMICONDUCTORS [J].

HARCOURT, RW ;

FROOM, J ;

SANDBANK, CP .

RADIO AND ELECTRONIC ENGINEER, 1966, 31 (03) :145-+

[4] HIGH FIELD DOMAINS IN CADMIUM SULFIDE [J].

HAYDL, WH ;

QUATE, CF .

PHYSICS LETTERS, 1966, 20 (05) :463-+

[5] SOME PROPERTIES OF MOVING HIGH-FIELD DOMAIN IN GUNN EFFECT DEVICES [J].

HEEKS, JS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :68-+

[6] COHERENT HIGH FIELD OSCILLATIONS IN LONG SAMPLES OF GAAS [J].

HEEKS, JS ;

WOODE, AD ;

SANDBANK, CP .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (05) :554-&

[7] TRANSFERRED ELECTRON AMPLIFIERS AND OSCILLATORS [J].

HILSUM, C .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (02) :185-&

[8] SPATIAL VARIATION OF ELECTRIC FIELD STRENGTH IN AMPLIFYING CDS [J].

MAINES, JD ;

PAIGE, EGS .

SOLID STATE COMMUNICATIONS, 1966, 4 (08) :381-&

[9] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J].

RIDLEY, BK ;

WATKINS, TB .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500) :293-&

[10] SPECIFIC NEGATIVE RESISTANCE IN SOLIDS [J].

RIDLEY, BK .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (530) :954-&

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