MEASUREMENTS OF DEGRADATION OF SILICON DETECTORS AND ELECTRONICS IN VARIOUS RADIATION ENVIRONMENTS

被引:7
作者
BEUVILLE, E
CENCI, P
FEDERSPIEL, A
GOSSLING, C
HEIJNE, EHM
JARRON, P
KRANER, HW
MASSAM, T
MUNDAY, D
PAL, T
机构
[1] BROOKHAVEN NATL LAB,UPTON,NY 11973
[2] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE,ENGLAND
[3] CERN,EUROPEAN ORG NUCL RES,CH-1211 GENEVA 23,SWITZERLAND
[4] UNIV PERUGIA,DEPT PHYS,I-06100 PERUGIA,ITALY
[5] UNIV PERUGIA,IST NAZL FIS NUCL,I-06100 PERUGIA,ITALY
关键词
D O I
10.1016/0168-9002(90)90465-I
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Displacement damage in silicon particle detectors, exposed to a high-energy muon irradiation at the CERN SPS, is observed to be less in p-type than in n-type silicon. X-ray irradiation of various test structures reveals the importance of surface leakage currents. The irradiation of detectors and electronics in the UA2 collider experiment at the SPS indicates a strong, low energy neutron component, which degrades the detectors but hardly influences the CMOS circuits. © 1990.
引用
收藏
页码:68 / 75
页数:8
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