DEVELOPMENT OF TEST STRUCTURES FOR SILICON PARTICLE DETECTORS

被引：2

作者：

HEIJNE, EHM ^{[1
]}

DEBUSSCHERE, I ^{[1
]}

DECLERCK, G ^{[1
]}

VANSTRAELEN, G ^{[1
]}

机构：

[1] IMEC,LEUVEN,BELGIUM

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1987年 / 253卷 / 03期

关键词：

D O I：

10.1016/0168-9002(87)90514-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：325 / 332

页数：8

相关论文

共 7 条

[1] BOSIERS J, 1985, IEDM166 PAP
[2] Ghandi S., 1977, SEMICONDUCTOR POWER, V1st
[3] HEIJNE EHM, 1985, SPIE P, V591, P1
[4] FABRICATION OF LOW-NOISE SILICON RADIATION DETECTORS BY THE PLANAR PROCESS
KEMMER, J
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 169 (03): : 499 - 502
[5] Nicollian E. H., 1982, METAL OXIDE SEMICOND
[6] A DEEP-DEPLETION CCD IMAGER FOR SOFT-X-RAY, VISIBLE, AND NEAR-INFRARED SENSING
TSOI, HY
ELLUL, JP
KING, MI
WHITE, JJ
BRADLEY, WC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (08) : 1525 - 1530
[7] CHARGE CARRIER LIFETIME MEASUREMENTS ON HIGH-PURITY SILICON
VANWIJNEN, PJ
TENKATE, WRT
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1987, 253 (03) : 351 - 359