CHARGE CARRIER LIFETIME MEASUREMENTS ON HIGH-PURITY SILICON

被引：9

作者：

VANWIJNEN, PJ

TENKATE, WRT

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1987年 / 253卷 / 03期

关键词：

D O I：

10.1016/0168-9002(87)90516-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：351 / 359

页数：9

共 12 条

[1] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J].

HEIMAN, FP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :781-+

[2] FABRICATION OF LOW-NOISE SILICON RADIATION DETECTORS BY THE PLANAR PROCESS [J].

KEMMER, J .

NUCLEAR INSTRUMENTS & METHODS, 1980, 169 (03) :499-502

[3]

NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[4] THE ANNEALING OF 1-MEV IMPLANTATIONS OF BORON IN SILICON [J].

OOSTERHOFF, S ;

MIDDELHOEK, J .

SOLID-STATE ELECTRONICS, 1985, 28 (05) :427-433

[5] LINEAR-SWEEP MOS-C TECHNIQUE FOR DETERMINING MINORITY CARRIER LIFETIMES [J].

PIERRET, RF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (07) :869-+

[6]

RUNYAN WR, 1975, SEMICONDUCTOR MEASUR, P105

[7] THE CONCEPT OF GENERATION AND RECOMBINATION LIFETIMES IN SEMICONDUCTORS [J].

SCHRODER, DK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (08) :1336-1338

[8] EFFECTIVE LIFETIMES IN HIGH-QUALITY SILICON DEVICES [J].

SCHRODER, DK .

SOLID-STATE ELECTRONICS, 1984, 27 (03) :247-251

[9] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[10]

SZE SM, 1981, PHYSICS SEMICONDUCTO

← 1 2 →