THE ANNEALING OF 1-MEV IMPLANTATIONS OF BORON IN SILICON

被引:11
作者
OOSTERHOFF, S
MIDDELHOEK, J
机构
关键词
D O I
10.1016/0038-1101(85)90103-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:427 / 433
页数:7
相关论文
共 19 条
[1]   RANGE OF DOUBLY CHARGED BORON IONS [J].
BLAMIRES, NG ;
SMITH, BJ .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (05) :799-804
[2]  
CARTER G, 1976, ION IMPLANTATION SEM, P180
[4]  
HOFKER WA, 1975, PHILIPS RES REP S, V8
[5]   LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION AT QUASI-HIGH FLOW [J].
HOLLEMAN, J ;
MIDDELHOEK, J .
THIN SOLID FILMS, 1984, 114 (03) :295-309
[6]  
Kostka A., 1973, Radiation Effects, V19, P77, DOI 10.1080/00337577308232222
[7]  
MABY EW, 1979, THESIS MIT CAMBRIDGE
[8]  
Massetti G., 1983, IEEE T ELECTRON DEV, V30, P764
[9]  
OOSTERHOFF S, 1983, 4TH P INT C ION IMPL, P438
[10]  
Rehrig D. L., 1980, Semiconductor International, V3, P151