RANGE OF DOUBLY CHARGED BORON IONS

被引：3

作者：

BLAMIRES, NG ^{[1
]}

SMITH, BJ ^{[1
]}

机构：

[1] AERE,DIV ELECTR & APPL PHYS,HARWELL DIDCOT,BERKSHIRE,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1977年 / 10卷 / 05期

关键词：

D O I：

10.1088/0022-3727/10/5/021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：799 / 804

页数：6

共 11 条

[1] PROPERTIES OF SILICON IMPLANTED WITH BORON IONS THROUGH THERMAL SILICON DIOXIDE [J].

BAUER, LO ;

MACPHERSON, MR ;

ROBINSON, AT ;

DILL, HG .

SOLID-STATE ELECTRONICS, 1973, 16 (03) :289-+

[2]

DEARNALEY G., 1973, ION IMPLANTATION

[3] CHANNELING OF MEDIUM-MASS IONS THROUGH SILICON [J].

EISEN, FH .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :561-&

[4]

GROB JJ, 1975, I PHYS C SER, P24

[5]

HIDETOSHI N, 1975, FUJITSU SCI TECH J, V11, P113

[6]

HOFKER WK, 1975, PHILIPS RES REP S8

[7] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J].

KENNEDY, DP ;

OBRIEN, RR .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (02) :212-&

[8]

SMITH B, 1977, ION IMPLANTATION RAN

[9] DOPING CENTERS IN PARTIALLY ANNEALED CARBON IMPLANTED SILICON [J].

SMITH, BJ ;

STEPHEN, J ;

HAMMERSLEY, PJ .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 26 (1-2) :17-21

[10]

STEPHEN J, 1974, 4TH INT C ION IMPL S, P665

← 1 2 →