PROPERTIES OF SILICON IMPLANTED WITH BORON IONS THROUGH THERMAL SILICON DIOXIDE

被引：16

作者：

BAUER, LO ^{[1
]}

MACPHERSON, MR ^{[1
]}

ROBINSON, AT ^{[1
]}

DILL, HG ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO, NEWPORT BEACH, CA 92663 USA

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 03期

关键词：

D O I：

10.1016/0038-1101(73)90001-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：289 / +

页数：1

共 26 条

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[2]

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[6]

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[7]

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[9] COMPLEMENTARY MOS 1.2 VOLT WATCH CIRCUIT USING ION IMPLANTATION [J].

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[10]

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