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THE CONCEPT OF GENERATION AND RECOMBINATION LIFETIMES IN SEMICONDUCTORS
被引:139
作者
:
SCHRODER, DK
论文数:
0
引用数:
0
h-index:
0
SCHRODER, DK
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1982年
/ 29卷
/ 08期
关键词
:
D O I
:
10.1109/T-ED.1982.20879
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1336 / 1338
页数:3
相关论文
共 17 条
[1]
COMPARISON OF GOLD, PLATINUM, AND ELECTRON-IRRADIATION FOR CONTROLLING LIFETIME IN POWER RECTIFIERS
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR RES & DEV,SCHENECTADY,NY 12301
BALIGA, BJ
SUN, E
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR RES & DEV,SCHENECTADY,NY 12301
SUN, E
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(06)
: 685
-
688
[2]
BULLIS WM, 1968, NBS465 TECH NOT
[3]
ANALYSIS AND MEASUREMENT OF CARRIER LIFETIMES IN VARIOUS OPERATING MODES OF POWER DEVICES
CORNU, J
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN BOVERI RES CTR, CH-5401 BADEN, SWITZERLAND
BROWN BOVERI RES CTR, CH-5401 BADEN, SWITZERLAND
CORNU, J
SITTIG, R
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN BOVERI RES CTR, CH-5401 BADEN, SWITZERLAND
BROWN BOVERI RES CTR, CH-5401 BADEN, SWITZERLAND
SITTIG, R
ZIMMERMANN, W
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN BOVERI RES CTR, CH-5401 BADEN, SWITZERLAND
BROWN BOVERI RES CTR, CH-5401 BADEN, SWITZERLAND
ZIMMERMANN, W
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(10)
: 1099
-
1106
[4]
AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON
DZIEWIOR, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYSIKAL,D-7000 STUTTGART 80,FED REP GER
DZIEWIOR, J
SCHMID, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYSIKAL,D-7000 STUTTGART 80,FED REP GER
SCHMID, W
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(05)
: 346
-
348
[5]
SURFACE RECOMBINATION IN SEMICONDUCTORS
FITZGERALD, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, CA
FITZGERALD, DJ
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, CA
GROVE, AS
[J].
SURFACE SCIENCE,
1968,
9
(02)
: 347
-
+
[6]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[7]
ANALYSIS + CHARACTERIZATION OF P-N JUNCTION DIODE SWITCHING
KUNO, HJ
论文数:
0
引用数:
0
h-index:
0
KUNO, HJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(01)
: 8
-
&
[8]
DIFFERENCES BETWEEN PLATINUM-DOPED AND GOLD-DOPED SILICON POWER DEVICES
MILLER, MD
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
MILLER, MD
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(12)
: 1279
-
1283
[9]
NEUGROSCHEL A, 1977, IEEE T ELECTRON DEV, V24, P662, DOI 10.1109/T-ED.1977.18800
[10]
DETERMINATION OF LIFETIMES AND RECOMBINATION CURRENTS IN P-N-JUNCTION SOLAR-CELLS, DIODES, AND TRANSISTORS
NEUGROSCHEL, A
论文数:
0
引用数:
0
h-index:
0
NEUGROSCHEL, A
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(01)
: 108
-
115
←
1
2
→
共 17 条
[1]
COMPARISON OF GOLD, PLATINUM, AND ELECTRON-IRRADIATION FOR CONTROLLING LIFETIME IN POWER RECTIFIERS
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR RES & DEV,SCHENECTADY,NY 12301
BALIGA, BJ
SUN, E
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR RES & DEV,SCHENECTADY,NY 12301
SUN, E
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(06)
: 685
-
688
[2]
BULLIS WM, 1968, NBS465 TECH NOT
[3]
ANALYSIS AND MEASUREMENT OF CARRIER LIFETIMES IN VARIOUS OPERATING MODES OF POWER DEVICES
CORNU, J
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN BOVERI RES CTR, CH-5401 BADEN, SWITZERLAND
BROWN BOVERI RES CTR, CH-5401 BADEN, SWITZERLAND
CORNU, J
SITTIG, R
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN BOVERI RES CTR, CH-5401 BADEN, SWITZERLAND
BROWN BOVERI RES CTR, CH-5401 BADEN, SWITZERLAND
SITTIG, R
ZIMMERMANN, W
论文数:
0
引用数:
0
h-index:
0
机构:
BROWN BOVERI RES CTR, CH-5401 BADEN, SWITZERLAND
BROWN BOVERI RES CTR, CH-5401 BADEN, SWITZERLAND
ZIMMERMANN, W
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(10)
: 1099
-
1106
[4]
AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON
DZIEWIOR, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYSIKAL,D-7000 STUTTGART 80,FED REP GER
DZIEWIOR, J
SCHMID, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYSIKAL,D-7000 STUTTGART 80,FED REP GER
SCHMID, W
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(05)
: 346
-
348
[5]
SURFACE RECOMBINATION IN SEMICONDUCTORS
FITZGERALD, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, CA
FITZGERALD, DJ
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, CA
GROVE, AS
[J].
SURFACE SCIENCE,
1968,
9
(02)
: 347
-
+
[6]
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[7]
ANALYSIS + CHARACTERIZATION OF P-N JUNCTION DIODE SWITCHING
KUNO, HJ
论文数:
0
引用数:
0
h-index:
0
KUNO, HJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(01)
: 8
-
&
[8]
DIFFERENCES BETWEEN PLATINUM-DOPED AND GOLD-DOPED SILICON POWER DEVICES
MILLER, MD
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
MILLER, MD
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1976,
23
(12)
: 1279
-
1283
[9]
NEUGROSCHEL A, 1977, IEEE T ELECTRON DEV, V24, P662, DOI 10.1109/T-ED.1977.18800
[10]
DETERMINATION OF LIFETIMES AND RECOMBINATION CURRENTS IN P-N-JUNCTION SOLAR-CELLS, DIODES, AND TRANSISTORS
NEUGROSCHEL, A
论文数:
0
引用数:
0
h-index:
0
NEUGROSCHEL, A
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(01)
: 108
-
115
←
1
2
→