ANALYSIS AND MEASUREMENT OF CARRIER LIFETIMES IN VARIOUS OPERATING MODES OF POWER DEVICES

被引：22

作者：

CORNU, J ^{[1
]}

SITTIG, R ^{[1
]}

ZIMMERMANN, W ^{[1
]}

机构：

[1] BROWN BOVERI RES CTR, CH-5401 BADEN, SWITZERLAND

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 10期

关键词：

D O I：

10.1016/0038-1101(74)90151-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1099 / 1106

页数：8

相关论文

共 20 条

[1] RECOMBINATION PROPERTIES OF GOLD IN SILICON
BEMSKI, G
[J]. PHYSICAL REVIEW, 1958, 111 (06): : 1515 - 1518
[2] REVERSE RECOVERY PROCESSES IN SILICON POWER RECTIFIERS
BENDA, H
SPENKE, E
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1331 - &
[3] LIFETIME IN P-TYPE SILICON
BLAKEMORE, JS
[J]. PHYSICAL REVIEW, 1958, 110 (06): : 1301 - 1308
[4] ELECTRICAL PROPERTIES OF HIGH-RESISTIVITY NICKEL-DOPED SILICON
CHUA, WB
ROSE, K
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2644 - &
[5] FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES
CORNU, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) : 347 - 352
[6] NUMERICAL INVESTIGATION OF THYRISTOR FORWARD CHARACTERISTIC
CORNU, J
LIETZ, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (08) : 975 - &
[7] GRAY PE, 1967, PHYSICAL ELECTRONICS, P23
[8] ELECTRON-HOLE RECOMBINATION IN GERMANIUM
HALL, RN
[J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387
[9] FORWARD CHARACTERISTIC OF SILICON POWER RECTIFIERS AT HIGH CURRENT DENSITIES
HERLET, A
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (08) : 717 - &
[10] AN EXPERIMENTAL DETERMINATION OF THE CARRIER LIFETIME IN P-I-N DIODES FROM THE STORED CARRIER CHARGE
HOFFMANN, A
SCHUSTER, K
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 717 - 724