ELECTRICAL PROPERTIES OF HIGH-RESISTIVITY NICKEL-DOPED SILICON

[1] THE SOLID SOLUBILITY OF NICKEL IN SILICON DETERMINED BY NEUTRON ACTIVATION ANALYSIS [J]. APPLIED PHYSICS LETTERS, 1962, 1 (01) : 19 - 20

[2] CHUA WB, 1967, THESIS RENSSELAER PO

[3] PROPERTIES OF SILICON AND GERMANIUM .2. [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300

[4] PROPERTIES OF NICKEL IN SILICON [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1484 - &

[5] MORDKOVICH VN, 1964, SOV PHYS-SOL STATE, V6, P654

[6] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[7] LATTICE-SCATTERING MOBILITY IN GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (01): : 62 - 63

[8] PRINCE M, 1965, PHYS REV, V93, P1204

[9] SMITH RA, 1963, P INT SCH PHYSICS EN, P228

[10] HALL EFFECT MEASUREMENT OF RADIATION DAMAGE + ANNEALING IN SI [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (02) : 167 - &

[1] THE SOLID SOLUBILITY OF NICKEL IN SILICON DETERMINED BY NEUTRON ACTIVATION ANALYSIS [J]. APPLIED PHYSICS LETTERS, 1962, 1 (01) : 19 - 20

[2] CHUA WB, 1967, THESIS RENSSELAER PO

[3] PROPERTIES OF SILICON AND GERMANIUM .2. [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1281 - 1300

[4] PROPERTIES OF NICKEL IN SILICON [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1484 - &

[5] MORDKOVICH VN, 1964, SOV PHYS-SOL STATE, V6, P654

[6] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[7] LATTICE-SCATTERING MOBILITY IN GERMANIUM [J]. PHYSICAL REVIEW, 1954, 93 (01): : 62 - 63

[8] PRINCE M, 1965, PHYS REV, V93, P1204

[9] SMITH RA, 1963, P INT SCH PHYSICS EN, P228

[10] HALL EFFECT MEASUREMENT OF RADIATION DAMAGE + ANNEALING IN SI [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (02) : 167 - &