共 9 条
- [1] INUISHI Y, 1963, J PHYS SOC JAPAN S3, V18, P240
- [2] MATSUURA K, 1961, TECHNOL REPS OSAKA U, V12, P39
- [3] NAKANO T, TO BE PUBLISHED
- [4] SAITO H, 1963, J PHYS SOC JAPAN S3, V18, P246
- [5] VAVILOV VS, 1963, J PHYS SOC JAPAN S3, V18, P236
- [6] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1198 - 1203
- [7] DEFECTS IN IRRADIATED SILICON .1. ELECTRON SPIN RESONANCE OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1001 - &
- [8] ELECTRON-BOMBARDMENT DAMAGE IN OXYGEN-FREE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1232 - 1234
- [9] [No title captured]