HALL EFFECT MEASUREMENT OF RADIATION DAMAGE + ANNEALING IN SI

[1] INUISHI Y, 1963, J PHYS SOC JAPAN S3, V18, P240

[2] MATSUURA K, 1961, TECHNOL REPS OSAKA U, V12, P39

[3] NAKANO T, TO BE PUBLISHED

[4] SAITO H, 1963, J PHYS SOC JAPAN S3, V18, P246

[5] VAVILOV VS, 1963, J PHYS SOC JAPAN S3, V18, P236

[6] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1198 - 1203

[7] DEFECTS IN IRRADIATED SILICON .1. ELECTRON SPIN RESONANCE OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1001 - &

[8] ELECTRON-BOMBARDMENT DAMAGE IN OXYGEN-FREE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1232 - 1234

[9] [No title captured]

[1] INUISHI Y, 1963, J PHYS SOC JAPAN S3, V18, P240

[2] MATSUURA K, 1961, TECHNOL REPS OSAKA U, V12, P39

[3] NAKANO T, TO BE PUBLISHED

[4] SAITO H, 1963, J PHYS SOC JAPAN S3, V18, P246

[5] VAVILOV VS, 1963, J PHYS SOC JAPAN S3, V18, P236

[6] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1198 - 1203

[7] DEFECTS IN IRRADIATED SILICON .1. ELECTRON SPIN RESONANCE OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1001 - &

[8] ELECTRON-BOMBARDMENT DAMAGE IN OXYGEN-FREE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1232 - 1234

[9] [No title captured]