DIFFERENCES BETWEEN PLATINUM-DOPED AND GOLD-DOPED SILICON POWER DEVICES

被引：28

作者：

MILLER, MD ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

关键词：

D O I：

10.1109/T-ED.1976.18650

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1279 / 1283

页数：5

共 17 条

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[5] CHARLOT JJ, 1970, CR ACAD SCI B PHYS, V270, P1488
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[7] GLINCHUK KD, 1965, FIZ TVERD TELA+, V6, P2963
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[9] ENERGY-LEVELS AND CONCENTRATIONS FOR PLATINUM IN SILICON
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MILNES, AG
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (06) : 533 - 540
[10] LIFETIME-CONTROLLING RECOMBINATION CENTERS IN PLATINUM-DIFFUSED SILICON
MILLER, MD
SCHADE, H
NUESE, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2569 - 2578