COMPARISON OF GOLD, PLATINUM, AND ELECTRON-IRRADIATION FOR CONTROLLING LIFETIME IN POWER RECTIFIERS

被引：130

作者：

BALIGA, BJ

SUN, E

机构：

[1] GE,CTR RES & DEV,SCHENECTADY,NY 12301

[2] GE,DEPT SEMICONDUCTOR PROD,AUBURN,NY 13021

来源：

关键词：

D O I：

10.1109/T-ED.1977.18803

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：685 / 688

页数：4

共 8 条

[1]

EVWARAYE AO, 1976, OCT EL SOC M

[2] GOLD AS A RECOMBINATION CENTRE IN SILICON [J].

FAIRFIELD, JM ;

GOKHALE, BV .

[3] CONTROL OF DIFFUSED DIODE RECOVERY TIME THROUGH GOLD DOPING [J].

FAIRFIELD, JM ;

GOKHALE, BV .

[4] PLATINUM AS A LIFETIME-CONTROL DEEP IMPURITY IN SILICON [J].

LISIAK, KP ;

MILNES, AG .

MATSUZAWA, T ;

USUNAGA, Y .

[6]

MILLER MD, 1975, INT ELECTRON DEVICES, P180

[7]

TARNEJA KS, 1975, ELECTROCHEM SOC M

[8]

ZIMMERMAN W, 1973, ELECTRON LETT, V9